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File name: | phb80n06t_1.pdf [preview phb80n06t 1] |
Size: | 56 kB |
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Mfg: | Philips |
Model: | phb80n06t 1 🔎 |
Original: | phb80n06t 1 🔎 |
Descr: | . Electronic Components Datasheets Active components Transistors Philips phb80n06t_1.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 29-07-2020 |
User: | Anonymous |
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Extracted files: | 1 | |
File name phb80n06t_1.pdf Philips Semiconductors Product specification TrenchMOSTM transistor PHB80N06T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC)1 75 A 'trench' technology the device Ptot Total power dissipation 178 W features very low on-state resistance Tj Junction temperature 175 |
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